The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Oct. 25, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Xinman Cao, Hefei, CN;

Jun Xia, Hefei, CN;

Zhongming Liu, Hefei, CN;

Shijie Bai, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/02068 (2013.01); H01L 21/76837 (2013.01); H01L 21/76843 (2013.01);
Abstract

A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method for manufacturing a semiconductor structure includes: forming a conductive layer, a protective layer, and a mask layer in sequence on the substrate, the mask layer including a first pattern facing the first region and a second pattern facing the second region; forming a restriction pattern located in the second region by etching the protective layer using the mask layer as a mask; and forming contact pads located in the first region and connecting wires located in the second region on the conductive layer by etching the conductive layer using the mask layer as a mask.


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