The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Feb. 26, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Zhongkui Tan, Fremont, CA (US);
Xiaofeng Su, Portland, OR (US);
Hua Xiang, Dublin, CA (US);
Ce Qin, Fremont, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01J 37/321 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/334 (2013.01);
Abstract
Provided herein are methods and related apparatus for mask reconstruction in an etch process. The methods involve depositing a sacrificial layer on the mask layer. The sacrificial layer may be used to protect portions of the mask layer during reshaping by inhibiting etching of or deposition on the mask layer position on the mask layer. Following mask reshaping, the sacrificial layer may be removed using the same etch process that is used to etch the target material.