The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Aug. 01, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Feng-Wei Kuo, Hsinchu County, TW;
Wen-Shiang Liao, Miaoli County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/34 (2006.01); G02B 6/124 (2006.01); G02B 6/13 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
G02B 6/34 (2013.01); G02B 6/124 (2013.01); G02B 6/13 (2013.01); H01L 21/02 (2013.01);
Abstract
A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.