The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Aug. 11, 2023
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Jun Ogi, Tokyo, JP;

Yuri Kato, Kanagawa, JP;

Naohiko Kimizuka, Kanagawa, JP;

Yoshihisa Matoba, Kanagawa, JP;

Kan Shimizu, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 29/24 (2006.01); G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
G01R 29/24 (2013.01); G01N 27/4145 (2013.01);
Abstract

To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.


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