The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Aug. 09, 2023
Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, TW;
Kang-Yi Lien, Tainan, TW;
I-Hsuan Chiu, Taipei, TW;
Yi-Chieh Huang, Tainan, TW;
Chia-Ming Hung, Taipei, TW;
Kuan-Chi Tsai, Kaohsiung, TW;
Hsiang-Fu Chen, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.