The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Feb. 03, 2022
Applicant:

Tencent Technology (Shenzhen) Company Limited, Shenzhen, CN;

Inventors:

Yu Zhou, Shenzhen, CN;

Zhenxing Zhang, Shenzhen, CN;

Sainan Huai, Shenzhen, CN;

Yarui Zheng, Shenzhen, CN;

Shengyu Zhang, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/12 (2023.01); G06N 10/40 (2022.01); G06N 10/60 (2022.01); H01P 7/06 (2006.01); H10N 60/85 (2023.01);
U.S. Cl.
CPC ...
H10N 60/12 (2023.02); G06N 10/40 (2022.01); G06N 10/60 (2022.01); H01P 7/06 (2013.01); H10N 60/855 (2023.02);
Abstract

A superconducting quantum hybrid system includes: a silicon carbide (SiC) epitaxial layer; and a superconducting qubit line, the superconducting qubit line corresponding to a superconducting qubit, where a designated region of the SiC epitaxial layer includes a nitrogen vacancy (NV) center, the NV center being formed by implanting nitrogen ions into the designated region of the SiC epitaxial layer, and where the superconducting qubit line is located on a surface of the SiC epitaxial layer, the superconducting qubit is coupled to a solid-state defect qubit, and the solid-state defect qubit is a qubit corresponding to the NV center in the designated region.


Find Patent Forward Citations

Loading…