The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Aug. 29, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Longyang Chen, Hefei, CN;

Zhongming Liu, Hefei, CN;

Yexiao Yu, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02);
Abstract

Embodiments provide a method for fabricating a memory and a memory. This method includes: providing a substrate, the substrate being internally provided with a plurality of active areas, and each of the plurality of active areas including a first contact region and a second contact region; forming a plurality of bit lines on the substrate, each of the plurality of bit lines being connected to at least one of the first contact regions; forming an isolation layer on each of the plurality of bit lines, the isolation layer covering each of the plurality of bit lines and the substrate, the isolation layer being further provided with a plurality of filling holes corresponding to the plurality of second contact regions one to one; etching the isolation layer and the substrate along the plurality of filling holes, to fill in the plurality of second contact regions.


Find Patent Forward Citations

Chen, Longyang. (2024). Method for fabricating memory and memory (U.S. Patent No. 12160987). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12160987

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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