The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Jul. 26, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Marcus Johannes Henricus Van Dal, Hsinchu, TW;
Gerben Doornbos, Hsinchu, TW;
Georgios Vellianitis, Hsinchu, TW;
Mauricio Manfrini, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a channel layer, source/drain contacts, and first barrier liners. The channel layer includes an oxide semiconductor material. The source/drain contacts are disposed in electrical contact with the channel layer. The first barrier liners surround the source/drain contacts, respectively, and include a hydrogen barrier material so as to prevent hydrogen from diffusion through the first barrier liners to the channel layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile