The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Nov. 10, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Chung Chen, Keelung, TW;

Tsung-Hsin Yu, Hsinchu, TW;

Chung-Hui Chen, Hsinchu, TW;

Hui-Zhong Zhuang, Kaohsiung, TW;

Ya Yun Liu, Jhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1079 (2013.01); H01L 21/823475 (2013.01); H01L 21/823493 (2013.01); H01L 27/088 (2013.01); H01L 29/0847 (2013.01);
Abstract

The present disclosure describes structure with a substrate, a first well region, a second well region, and a third well region. The first well region is in the substrate. The second well region is in the first well region and includes a first source/drain (S/D) region. The third well region is in the substrate and adjacent to the first well region. The third well region includes a second S/D region, where a spacing between the first and second S/D regions is less than about 3 μm.


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