The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Aug. 20, 2020
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Norihito Fukatsu, Tokyo, JP;
Ryusuke Yokoyama, Tokyo, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); C30B 29/06 (2006.01); C30B 30/04 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01);
Abstract
There is provided a growing method for monocrystalline silicon by a Czochralski process, the method including: pulling the monocrystalline silicon while rotating the monocrystalline silicon; and dropping a granular dopant onto a liquid surface of a silicon melt while a straight body of the monocrystalline silicon is being pulled, in which in the dropping of the dopant, a dropping position of the granular dopant is set above a region where a flow away from the straight body is dominant in the liquid surface of the silicon melt.