The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Sep. 06, 2023
Applicant:

Macdermid Enthone Inc., Waterbury, CT (US);

Inventors:

Richard W. Hurtubise, Clinton, CT (US);

Eric Yakobson, East Haven, CT (US);

Shaopeng Sun, Lake Oswego, OR (US);

Taylor L Wilkins, Hamden, CT (US);

Elie H. Najjar, Norwood, MA (US);

Wenbo Shao, New Canaan, CT (US);

Assignee:

MacDermid Enthone Inc., Waterbury, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 3/00 (2006.01); C23C 14/02 (2006.01); C23C 14/08 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
C23C 16/403 (2013.01); C23C 14/02 (2013.01); C23C 14/081 (2013.01); C23C 16/02 (2013.01); C25D 3/00 (2013.01);
Abstract

A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.


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