The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Nov. 21, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Po-Wei Wang, Tainan, TW;

Yi-An Shih, Changhua County, TW;

Huan-Chi Ma, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10B 61/00 (2023.02); H10N 50/85 (2023.02);
Abstract

A semiconductor device includes a sense amplifier, a first magnetic tunneling junction (MTJ) connected to the sense amplifier at a first distance, a second MTJ connected to the sense amplifier at a second distance, and a third MTJ connected to the sense amplifier at a third distance. Preferably, the first distance is less than the second distance, the second distance is less than the third distance, a critical dimension of the first MTJ is less than a critical dimension of the second MTJ, and the critical dimension of the second MTJ is less than a critical dimension of the third MTJ.


Find Patent Forward Citations

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Wang, Po-Wei. (2024). Semiconductor device comprising magnetic tunneling junctions with different distances/widths in a magnetoresistive random access memory (U.S. Patent No. 12156408). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12156408

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