The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Oct. 03, 2023
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Petar Atanackovic, Henley Beach South, AU;
Silanna UV Technologies Pte Ltd, Singapore, SG;
Abstract
The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, the techniques described herein relate to a transistor, including: a substrate including a first oxide material; an epitaxial oxide layer on the substrate including a second oxide material with a first bandgap; a gate layer on the epitaxial oxide layer, the gate layer including a third oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap; and electrical contacts. The second oxide material can include: one or two of Li, Ni, Al, Ga, Mg, and Zn; Ge; and O. The second oxide can also include (NiMgZn)GeOwherein 0≤x≤1 and 0≤y≤1. The electrical contacts can include: a source electrical contact coupled to the epitaxial oxide layer; a drain electrical contact coupled to the epitaxial oxide layer; and a first gate electrical contact coupled to the gate layer.