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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12154972 B1

PDFFull Text
Date of Patent:
Nov. 26, 2024

Filed:

Mar. 26, 2021

Diffused field-effect transistor

Applicant:

Nexchip Semiconductor Corporation, Anhui, CN;

Inventors:

Menghui Wang, Anhui, CN;

Ching-Ming Lee, Anhui, CN;

Jinzhuan Zhu, Anhui, CN;

Assignee:

NEXCHIP SEMICONDUCTOR CORPORATION, Anhui, CN;

Attorney:

MUNCY, GEISSLER, OLDS & LOWE, P.C.

Primary Examiner:

Victor A Mandala

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 29/0653 (2013.01); H01L 29/0873 (2013.01); H01L 29/42368 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01);
Abstract

A diffused field-effect transistor (FET) is disclosed. The diffused FET is dually optimized in voltage resistance by incorporating both a trench isolation structure and a thick second oxide layer and thus has a more significantly improved breakdown voltage. With the thick second oxide layer ensuring suitable voltage resistance of the transistor device, its on-resistance can be reduced either by reducing the size of the trench isolation structure or increasing an ion dopant concentration of a drift region. As such, a good tradeoff between voltage resistance and on-resistance is achievable.

Find Patent Forward Citations

Wang, Menghui. (2024). Diffused field-effect transistor (U.S. Patent No. 12154972). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12154972

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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