The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
May. 11, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming-Shuan Li, Zhudong Township, Hsinchu County, TW;
Ming-Lung Cheng, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure includes first nanostructures formed over a substrate. The semiconductor device structure also includes a first gate structure wrapping around the first nanostructures. The semiconductor device structure also includes a first source/drain epitaxial structure formed beside the first nanostructures. The semiconductor device structure further includes a first inner spacer extending from the first gate structure to the first source/drain epitaxial structure by a first distance. The semiconductor device structure also includes second nanostructures formed over the first nanostructures. The semiconductor device structure further includes a second gate structure wrapping around the second nanostructures. The semiconductor device structure also includes a second source/drain epitaxial structure formed beside the second nanostructures. The semiconductor device structure further includes a second inner spacer extending from the second gate structure to the second source/drain epitaxial structure by a second distance, wherein the second distance is different from the first distance.