The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Jul. 08, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyunsoo Chung, Hwaseong-si, KR;
Taewon Yoo, Seoul, KR;
Myungkee Chung, Hwaseong-si, KR;
Jinchan Ahn, Hwaseong-si, KR;
Abstract
Disclosed is a semiconductor package comprising a semiconductor chip and a redistribution layer. The semiconductor chip includes a semiconductor substrate, a passivation layer, and first power, second power, and signal pads exposed from the passivation layer. The redistribution layer includes a photosensitive dielectric layer, and first to third redistribution patterns and a high-k dielectric pattern that are in the photosensitive dielectric layer. The first, second, and third redistribution patterns are respectively connected to the first power, second power, and signal pads. The high-k dielectric pattern is between the first and second redistribution patterns. The photosensitive dielectric layer includes a first dielectric material. The high-k dielectric pattern includes a second dielectric material whose dielectric constant greater than that of the first dielectric material. The high-k dielectric pattern is in contact with the passivation layer. The passivation layer includes a dielectric material different from the first and second dielectric materials.