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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12154856 B1

PDFFull Text
Date of Patent:
Nov. 26, 2024

Filed:

Jul. 26, 2022

Methods of manufacturing via structures on source/drain contacts

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuo-Chiang Tsai, Hsinchu, TW;

Yi-Ju Chen, Tainan, TW;

Jyh-Huei Chen, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 21/76897 (2013.01); H01L 21/823418 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/7848 (2013.01);
Abstract

A method includes receiving a semiconductor structure having a source contact feature electrically connected to a source feature and a drain contact feature electrically connected to a drain feature. The method includes etching to form a drain via trench over the drain contact feature and forming a drain via in the drain via trench. After forming the drain via, the method further includes etching to form a source via trench over the source contact feature and forming a source via in the source via trench. The drain via has a first dimension along a first direction, the source via has a second dimension along the first direction, and the second dimension is greater than the first dimension.

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