The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Oct. 30, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Takayuki Katsunuma, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01J 37/00 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01J 37/00 (2013.01); H01J 37/32082 (2013.01); H01J 37/32155 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 21/67069 (2013.01);
Abstract
Etching stop which is caused by a metal released from a metal-containing mask can be avoided. A plasma etching method includes a protective film forming process of forming a protective film on a metal-containing film, which is formed on an etching target film and provided with a preset opening pattern, by a first processing gas; and an etching process of etching the etching target film by plasma generated from a second processing gas while using, as a mask, the metal-containing film on which the protective film is formed.