The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Feb. 24, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Noble Narku-Tetteh, Rancho Cordova, CA (US);

Yasir Mohsin Husain, Folsom, CA (US);

Ripudaman Singh, Folsom, CA (US);

Nicolas L. Irizarry, Folsom, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0097 (2013.01); G11C 2013/0045 (2013.01); G11C 2213/71 (2013.01); G11C 2213/79 (2013.01);
Abstract

Techniques for controlling current through memory cells is disclosed. In the illustrative embodiment, a fine-grained current source and a coarse-grained current source can both be activated to perform an operation on a phase-change memory cell. The coarse-grained current source is briefly activated to charge up the capacitance of an electrical path through the memory cell and then turned off. The fine-grained current source applies a current pulse to perform the operation on the memory cell, such as a reset operation. By charging up the electrical path quickly with the coarse-grained current source, the fine-grained current source can quickly perform the operation on the memory cell, reducing the thermal disturbance caused by the operation on nearby memory cells.


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