The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
May. 10, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Martin Brox, Munich, DE;
Manfred Hans Plan, Munich, DE;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 11/406 (2006.01); G11C 11/4074 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 11/40615 (2013.01); G11C 11/4074 (2013.01); G11C 11/4096 (2013.01);
Abstract
Methods, systems, and devices for power-efficient access line operation for memory are described. A memory device may drive a voltage pulse on a first word line included in a set of word lines that is coupled with a master word line. The memory device may then a voltage pulse on a second word line included in the set of word lines coupled with the master word line. In between driving the voltage pulse on the first word line and driving the voltage pulse on the second word line, the memory device may maintain a voltage on the master word line below a threshold level.