The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Jan. 26, 2021
Applicants:

Chongqing Boe Display Technology Co.,ltd., Chongqing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Teng Chen, Beijing, CN;

Faming Jiang, Beijing, CN;

Ri Chen, Beijing, CN;

Xinxing Jia, Beijing, CN;

Weixin Meng, Beijing, CN;

Jonguk Kwak, Beijing, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G09G 3/3266 (2016.01); G11C 19/28 (2006.01); H10K 59/12 (2023.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
G09G 3/3266 (2013.01); G11C 19/28 (2013.01); H10K 59/1201 (2023.02); H10K 59/1315 (2023.02); G09G 2300/0408 (2013.01); G09G 2300/0426 (2013.01); G09G 2310/0286 (2013.01);
Abstract

A display substrate includes an underlay substrate, and a first semiconductor layer, first conductive layer, second semiconductor layer, second conductive layer, and third conductive layer which are arranged on the underlay substrate. The first semiconductor layer includes an active layer of at least one transistor of a second semiconductor type of a shift register unit. The first conductive layer includes a control electrode of the at least one transistor of the second semiconductor type and a first electrode of at least one capacitor of the shift register unit. The second semiconductor layer includes an active layer of at least one transistor of a first semiconductor type of the shift register unit. The second conductive layer includes a control electrode of the at least one transistor of the first semiconductor type and a second electrode of the at least one capacitor of the shift register unit.


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