The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Dec. 31, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Priya Venkataraman, Boise, ID (US);
Pitamber Shukla, Boise, ID (US);
Vipul Patel, Santa Clara, CA (US);
Scott A. Stoller, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G06F 3/06 (2006.01); G06F 11/07 (2006.01); G06F 11/10 (2006.01); G06F 12/0882 (2016.01); G11C 29/04 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G06F 11/108 (2013.01); G06F 3/0619 (2013.01); G06F 3/0656 (2013.01); G06F 3/0688 (2013.01); G06F 11/0772 (2013.01); G06F 11/0793 (2013.01); G06F 11/1012 (2013.01); G06F 12/0882 (2013.01); G11C 16/3404 (2013.01); G11C 16/3418 (2013.01); G11C 29/04 (2013.01); G11C 29/44 (2013.01);
Abstract
Read calibration by sector of memory can include reading a page of memory, having more than one sector, with a read level, such as a default read level. In response to an error, such as an uncorrectable error correction code read result, the respective read level can be calibrated for each sector to yield a respective calibrated read level per sector. The page of memory can be read with the respective calibrated read level per sector. The calibrated read levels can be stored.