The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Feb. 20, 2020
Applicant:
Hoya Corporation, Tokyo, JP;
Inventors:
Assignee:
HOYA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2012.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01);
Abstract
A mask blankhas a structure in which a pattern-forming thin filmand a hard mask filmare formed on a transparent substratein this order. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV. An N1s narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak below a detection lower limit value. In the hard mask filma content ratio (atomic %) of silicon and oxygen is Si:O=1:less than 2.