The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Jun. 30, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuo-Cheng Ching, Zhubei, TW;
Kuan-Ting Pan, Taipei, TW;
Shi-Ning Ju, Hsinchu, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A fin field effect transistor device structure includes a substrate, an isolation structure, a first fin structure, a fin top layer, a first oxide layer, and a first gate structure. The first fin structure is disposed in the substrate and includes a base portion, a top portion, and a joint portion. The base portion is surrounded by the isolation structure. The top portion is exposed from the isolation structure. The joint portion connects the top portion and the base portion. The fin top layer is disposed over the top portion of the first fin structure. The fin top layer and the top portion of the first fin structure are made of different materials. The first oxide layer covers the fin top layer, the first fin structure, and the isolation structure. The first gate structure is disposed over the first oxide layer.