The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Mar. 30, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Keng-Yu Chou, Kaohsiung, TW;
Cheng Yu Huang, Hsinchu, TW;
Chun-Hao Chuang, Hsinchu, TW;
Wen-Hau Wu, New Taipei, TW;
Wei-Chieh Chiang, Yuanlin Township, TW;
Wen-Chien Yu, Hsin-Chu, TW;
Chih-Kung Chang, Zhudong Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.