The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Mar. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yun-Feng Kao, New Taipei, TW;

Chien-Hao Huang, Hsinchu, TW;

Gao-Ming Wu, New Taipei, TW;

Katherine H Chiang, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 28/90 (2013.01); H10B 12/033 (2023.02); H10B 12/31 (2023.02);
Abstract

A three-dimensional integrated structure and the manufacturing method(s) thereof are described. The three-dimensional integrated structure includes a substrate having conductive features therein, and a component array disposed over the substrate and on the conductive features. The component array includes a metallic material layer and capacitor structures separated by the metallic material layer. Each of the capacitor structures includes a first metallic pillar, a first dielectric sheath surrounding the first metallic pillar, a second metallic sheath surrounding the first dielectric sheath, and a second dielectric sleeve surrounding the second metallic sheath. The metallic material layer laterally encapsulates the capacitor structures.


Find Patent Forward Citations

Loading…