The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Mar. 11, 2022
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Yong Li, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses a method for manufacturing fin field effect transistors, comprising: step 1: performing first time etching to form top portions of fins, each of the top portions is divided into a first section and a second section; step 2: forming sacrificial sidewalls on the side surfaces of the second section but not on the side surfaces of the first section; step 3: forming a doped dielectric layer to coat the side surfaces of the first section; step 4: performing a dopant drive process to diffuse dopants of the doped dielectric layer into the first section; step 5: removing the doped dielectric layer and the sacrificial sidewalls; step 6: performing second time etching to form bottom portions of the fins; and step 7: forming a dielectric isolation layer between adjacent fins.