The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
May. 24, 2022
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Geun Young Yeom, Seoul, KR;
Doo San Kim, Haenam-gun, KR;
Yun Jong Jang, Seoul, KR;
Ye Eun Kim, Yongin-si, KR;
You Jung Gill, Suwon-si, KR;
Ki Hyun Kim, Daejeon, KR;
Hee Ju Kim, Suwon-si, KR;
You Jin Ji, Suwon-si, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Abstract
A dry etching method includes a first step of adsorbing first radicals into a surface of an etching target, wherein the first radicals are contained in first plasma generated from a plasma generator; and a second step of irradiating ion-beams extracted from second plasma generated from the plasma generator onto the surface of the etching target into which the radicals have been adsorbed, thereby desorbing a surface atomic layer of the etching target, wherein the first step is performed such that: a positive potential greater than a potential of the first plasma is applied to one or two selected from first to third grids, while a ground potential is applied to the rest thereof; and a negative potential equal to or lower than a potential of the third grid is applied to a substrate support structure.