The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Nov. 18, 2019
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Patrick A. van Cleemput, San Jose, CA (US);
Shruti Vivek Thombare, Sunnyvale, CA (US);
Michal Danek, Cupertino, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/06 (2013.01); C23C 16/45525 (2013.01); H01L 23/53257 (2013.01); H10B 12/34 (2023.02); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract
Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. The methods involve forming bulk conductive films on thin low resistivity transition metal layers that have large grain size. The bulk conductive films follow the grains of the low resistivity transition metal films, resulting in large grain size. Also provided are devices including template layers and bulk films.