The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Jul. 28, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Yen-Chieh Huang, Hsinchu, TW;
Hai-Ching Chen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 30/30 (2023.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H10N 30/071 (2023.01); H10N 30/098 (2023.01); H10N 30/50 (2023.01); H10N 30/87 (2023.01); G01L 1/16 (2006.01);
U.S. Cl.
CPC ...
H10N 30/302 (2023.02); H01L 29/41733 (2013.01); H01L 29/78696 (2013.01); H10N 30/071 (2023.02); H10N 30/098 (2023.02); H10N 30/50 (2023.02); H10N 30/871 (2023.02); G01L 1/16 (2013.01);
Abstract
A thin-film transistor includes a flexible substrate, an amorphous semiconductor channel layer on the flexible substrate, an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer, a gate electrode adjacent to the organic material piezoelectric stress gate layer, and a source electrode and drain electrode coupled to the organic material piezoelectric stress gate layer.