The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Mar. 03, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Feng-Chien Hsieh, Pingtung, TW;

Yun-Wei Cheng, Taipei, TW;

Kuo-Cheng Lee, Tainan, TW;

Cheng-Ming Wu, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14831 (2013.01); H01L 27/14612 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01);
Abstract

A pixel sensor may include a vertically arranged (or vertically stacked) photodiode region and floating diffusion region. The vertical arrangement permits the photodiode region to occupy a larger area of a pixel sensor of a given size relative to a horizontal arrangement, which increases the area in which the photodiode region can collect photons. This increases performance of the pixel sensor and permits the overall size of the pixel sensor to be reduced. Moreover, the transfer gate may surround at least a portion of the floating diffusion region and the photodiode region, which provides a larger gate switching area relative to a horizontal arrangement. The increased gate switching area may provide greater control over the transfer of the photocurrent and/or may reduce switching delay for the pixel sensor.


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