The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Feb. 14, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/04 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01L 21/0475 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01);
Abstract
An etching method includes: forming a protective film by supplying a protective film forming gas including at least one of a compound including a hydroxyl group and water to a substrate including a surface on which a first film and a second film are formed, each of which has a property of being etched by an etching gas, wherein the protective film covers the first film such that the first film is selectively protected from among the first film and the second film when the etching gas is supplied; and selectively etching the second film by supplying the etching gas to the substrate in a state in which the protective film is formed.