The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Aug. 30, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Vinayak Vishwanath Hassan, San Francisco, CA (US);

Bhaskar Kumar, Santa Clara, CA (US);

Meng Cai, Lynnfield, MA (US);

Sowjanya Musunuru, Milpitas, CA (US);

Kaushik Alayavalli, Sunnyvale, CA (US);

Andrew Nguyen, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); B24B 7/22 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); B24B 7/228 (2013.01); C23C 16/4404 (2013.01); H01J 37/32724 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01);
Abstract

Exemplary methods of manufacturing a semiconductor cover wafer may include sintering aluminum nitride particles into a substrate characterized by a thickness and characterized by a disc shape. The methods may include grinding a surface of the substrate to reduce the thickness to less than or about 2 mm. The methods may include polishing the surface of the substrate to reduce a roughness. The methods may include annealing the substrate at a temperature of greater than or about 800° C. for a time period of greater than or about 60 minutes.


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