The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
May. 31, 2022
Micron Technology, Inc., Boise, ID (US);
Tong Liu, Folsom, CA (US);
Daniele Vimercati, El Dorado Hills, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Systems and methods are related to a memory device including a plate line. The memory device also includes a pair of ferroelectric layers implementing a pair of memory cells and coupled to opposite sides of the plate line. The memory device further includes a pair of digit lines each coupled to a respective ferroelectric layer of the pair of ferroelectric layers. The memory device also includes a sense amplifier coupled to the pair of digit lines and configured to sense and amplify voltages received at the digit lines from the respective memory cells. The sense amplifier includes a threshold voltage compensated latch that includes multiple p-channel transistors and is configured to compensate for process, voltage, or temperature variation mismatches between the threshold voltages of the multiple p-channel transistors.