The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2024

Filed:

Aug. 30, 2022
Applicant:

Invensense, Inc., San Jose, CA (US);

Inventors:

Tsung Lin Tang, Kaohsiung, TW;

Chung-Hsien Lin, Hsinchu, TW;

Ting-Yuan Liu, Zhubei, TW;

Weng Shen Su, Hsinchu, TW;

Yaoching Wang, Zhubei, TW;

Assignee:

InvenSense, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/12 (2006.01); G01L 9/00 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0073 (2013.01); G01L 9/12 (2013.01);
Abstract

A pressure sensor comprises a polysilicon sensing membrane. The pressure sensor further includes one or more polysilicon electrodes disposed over a silicon substrate. The sensor also includes one or more polysilicon routing layers that electrically connects electrodes of the one or more polysilicon electrodes to one another, wherein the polysilicon sensing membrane deforms responsive to a stimuli and changes a capacitance between the polysilicon sensing membrane and the one or more polysilicon electrodes. The sensor also includes one or more vacuum cavities positioned between the polysilicon sensing membrane and the one or more polysilicon electrodes.


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Tang, Tsung. (2024). Pressure sensor with high stability (U.S. Patent No. 12140489). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12140489

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