The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Sep. 15, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yuhui Han, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Aspects of the disclosure provide methods of manufacturing a semiconductor device. In a method, a stack of alternating gate layers and insulating layers is formed over a first region and a second region of a substrate of the semiconductor device. The stack of alternating gate layers and insulating layers is of a stair-step form over the second region of the substrate. A channel structure is formed over the first region and dummy channel structures are formed over the second region. The dummy channel structures includes a first dummy channel structure disposed through a first stair region of the stair-step form, a second dummy channel structure disposed through a second stair region of the stair-step form adjacent to the first stair region, and a third dummy channel structure disposed at a boundary between the first stair region and the second stair region.