The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
May. 10, 2021
Enkris Semiconductor, Inc., Suzhou, CN;
ENKRIS SEMICONDUCTOR, INC., Suzhou, CN;
Abstract
A semiconductor structure includes a heterojunction, including at least two sets of channel layers and barrier layers stacked sequentially; a first p-type semiconductor, disposed in a gate region of the heterojunction and extended to a bottom of the heterojunction; and a second p-type semiconductor, disposed on the gate region of the heterojunction. By providing a heterojunction including at least two sets of channel layers and barrier layers stacked sequentially, multilayer 2DEG is realized by using multilayer channel layers and barrier layers to increase the concentration of 2DEG, thereby reducing the resistance. Since a first p-type semiconductor is disposed in a gate region of the heterojunction, the p-type semiconductor materials in the first p-type semiconductor are used to deplete the 2DEG to realize normally-off and increase the threshold voltage.