The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Jun. 19, 2019
Power Integrations, Inc., San Jose, CA (US);
Kuo-Chang Yang, Campbell, CA (US);
Sorin Georgescu, Gilroy, CA (US);
POWER INTEGRATIONS, INC., San Jose, CA (US);
Abstract
Coupled polysilicon guard rings for enhancing breakdown voltage in a power semiconductor device are presented herein. Polysilicon guard rings are disposed above the power device drift region and electrically coupled to power device regions (e.g., device diffusions) so as to spread electric fields associated with an operating voltage. Additionally, PN junctions (i.e., p-type and n-type junctions) are formed within the polysilicon guard rings to operate in reverse bias with a low leakage current between the power device regions (e.g., device diffusions). Low leakage current may advantageously enhance the electric field spreading without deleteriously affecting existing (i.e., normal) power device performance; and enhanced electric field spreading may in turn reduce breakdown-voltage drift.