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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12136602 B1

PDFFull Text
Date of Patent:
Nov. 05, 2024

Filed:

Oct. 14, 2021

Method of fabricating a semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ju-Il Choi, Seongnam-si, KR;

Pil-Kyu Kang, Hwaseong-si, KR;

Hoechul Kim, Seoul, KR;

Hoonjoo Na, Seoul, KR;

Jaehyung Park, Anyang-si, KR;

Seongmin Son, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Hung K Vu

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/16 (2023.01); H01L 23/31 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 25/167 (2013.01); H01L 23/3128 (2013.01); H01L 24/03 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/80 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/039 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05584 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/8083 (2013.01);
Abstract

A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.

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