The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Jan. 24, 2022
Filnex Inc., Tokyo, JP;
Mitsuhiko Ogihara, Tokyo, JP;
FILNEX INC., Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes the steps of a first separation process of separating the semiconductor layer from the first substrate by bringing a pick-up substrate into close contact with the semiconductor layer and then moving the pick-up substrate away from the first substrate, pressing of pressing the semiconductor layer that is in close contact with the pick-up substrate to the second substrate, temperature maintenance of maintaining temperatures of contact surfaces of the semiconductor layer and the second substrate at a temperature higher than room temperature while pressing the semiconductor layer onto the second substrate, and a second separation process of separating the semiconductor layer from the pick-up substrate after the temperatures of the contact surfaces are maintained at the temperature higher than room temperature.