The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Jan. 26, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Luguang Wang, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/7682 (2013.01); H01L 23/481 (2013.01);
Abstract
A semiconductor structure includes: a base including a substrate and a dielectric layer, herein the substrate having a front surface and a back surface that are oppositely arranged, and the dielectric layer is located on the front surface; a connecting hole penetrating the substrate and extending to the dielectric layer; a connecting structure, located in the connecting hole; and an insulating structure, located between the connecting structure and the inner wall of the connecting hole. The insulating structure, the inner wall of the connecting hole, and the connecting structure define an air gap.