The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Aug. 08, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/038 (2006.01); C08L 25/08 (2006.01); C08L 33/10 (2006.01); C08L 33/16 (2006.01); G03F 7/004 (2006.01); G03F 7/027 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0388 (2013.01); C08L 33/16 (2013.01); G03F 7/0045 (2013.01); G03F 7/027 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/40 (2013.01); C08L 25/08 (2013.01); C08L 33/10 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.