The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Nov. 28, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Harry-Hak-Lay Chuang, Zhubei, SG;
Kuei-Hung Shen, Hsinchu, TW;
Chern-Yow Hsu, Hsin-Chu County, TW;
Shih-Chang Liu, Kaohsiung County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CPMPANY, LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure, including an Nmetal layer over a transistor region, where N is a natural number, and a bottom electrode over the Nmetal layer. The bottom electrode comprises a bottom portion having a first width, disposed in a bottom electrode via (BEVA), the first width being measured at a top surface of the BEVA, and an upper portion having a second width, disposed over the bottom portion. The semiconductor structure also includes a magnetic tunneling junction (MTJ) layer having a third width, disposed over the upper portion, a top electrode over the MTJ layer and an (N+1)metal layer over the top electrode. The first width is greater than the third width.