The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jul. 28, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ting-Jung Chen, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a MEMS device is provided. The method includes forming a stack of layers on a base piezoelectric layer. The stack of layers includes a base metal film over the base piezoelectric layer; a first piezoelectric film over the base metal film; and a first metal film having an opening therein over the first piezoelectric film. The method also includes forming a trench in the stack of layers, wherein the trench passes through the opening in the first metal film but does not expose the base metal film; after forming the trench, forming a spacer structure under the first metal film but spaced apart from the base metal film; after forming the spacer structure, deepening the trench to expose the base metal film; and forming a contact in the trench.