The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Nov. 10, 2023
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Venkatakrishnan Sriraman, Singapore, SG;
Dae Hong Eom, Singapore, SG;
Ramanathan Gandhi, Boise, ID (US);
Donghua Li, Singapore, SG;
Ashok Kumar Muthukumaran, Singapore, SG;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01); H10B 43/27 (2023.02);
Abstract
A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNhaving a region comprising SiOtherebetween, where 'x' is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.