The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jul. 23, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ya-Wen Yang, Xiushui Township, Changhua County, TW;
Tsung-Yu Chiang, New Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/4916 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack and a second gate stack over a semiconductor substrate and forming a dielectric layer over the semiconductor substrate to surround the first gate stack and the second gate stack. The method also includes forming a protection element to cover the second gate stack. The method further includes replacing the first gate stack with a metal gate stack after the formation of the protection element.