The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Feb. 22, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hagyoul Bae, Hanam-si, KR;
Seunggeol Nam, Suwon-si, KR;
Jinseong Heo, Seoul, KR;
Sanghyun Jo, Seoul, KR;
Dukhyun Choe, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/66 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 22/12 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01);
Abstract
Provided are a ferroelectric semiconductor device and a method of extracting a defect density of the same. A ferroelectric electronic device includes a first layer, an insulating layer including a ferroelectric layer and a first interface that is adjacent to the first layer, and an upper electrode over the insulating layer, wherein the insulating layer has a bulk defect density of 10cmeVor more and an interface defect density of 10cmeVor more.