The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Dec. 08, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jaw-Juinn Horng, Hsinchu, TW;
Yi-Wen Chen, Hsinchu, TW;
Chin-Ho Chang, Hsinchu, TW;
Po-Yu Lai, Taipei, TW;
Yung-Chow Peng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device including at least one transistor cell including metal-oxide semiconductor field-effect transistors each having drain/source terminals and a channel length. The at least one transistor cell includes a first number of transistors of the metal-oxide semiconductor field-effect transistors connected in series, with one of the drain/source terminals of one of the first number of transistors connected to one of the drain/source terminals of another one of the first number of transistors and gates of the first number of transistors connected together. The at least one transistor cell configured to be used to provide a transistor having a longer channel length than the channel length of each of the metal-oxide semiconductor field-effect transistors.