The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jan. 20, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Ping-Heng Wu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A capacitance structure and a forming method thereof are provided, and the forming method includes: an annular gasket is formed on a substrate, and after a central through hole exposing a part of a surface of the substrate is formed in a center of the annular gasket, a first capacitance structure is formed in the central through hole; a dielectric layer covering the substrate, the annular gasket and the first capacitance structure is formed; the dielectric layer is etched to form an etching hole communicating with the central through hole in the dielectric layer; and a second capacitance structure connected to the first capacitance structure is formed in the etching hole.