The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Jan. 09, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyuekjae Lee, Hwaseong-si, KR;

Jongho Lee, Hwaseong-si, KR;

Jihoon Kim, Cheonan-si, KR;

Taehun Kim, Asan-si, KR;

Sangcheon Park, Hwaseong-si, KR;

Jinkyeong Seol, Cheonan-si, KR;

Sanghoon Lee, Seongnam-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 24/06 (2013.01); H01L 21/561 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/13 (2013.01); H01L 24/32 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 24/96 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/06182 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/83099 (2013.01); H01L 2224/8389 (2013.01); H01L 2224/92142 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01);
Abstract

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.


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